Material, usually a polymer, that when irradiated either undergoes a marked change in solubility in a given solvent or is ablated.
Notes: - A resist polymer under irradiation either forms patterns directly or undergoes chemical reactions leading to pattern formation after subsequent processing.
- In a positive-tone resist, also called a positive-working resist, the material in the irradiated area not covered by a mask is removed on development, which results in an image with a pattern identical with that on the mask. In a negative-tone resist, also called a negative-working resist, the non-irradiated area is subsequently removed, which results in an image with a pattern that is the complement of that on the mask.
Source:
PAC, 2020, 92, 1861. 'Terminology of polymers in advanced lithography (IUPAC Recommendations 2020)' on page 1886 (https://doi.org/10.1515/pac-2018-1215)