Widening of the
exposure dose distribution, and hence the developed pattern, caused by the scattering of the primary beam electrons within the
resist and substrate.
Source:
PAC, 2020, 92, 1861. 'Terminology of polymers in advanced lithography (IUPAC Recommendations 2020)' on page 1885 (https://doi.org/10.1515/pac-2018-1215)