https://doi.org/10.1351/goldbook.08870
Potential energy barrier at a semiconductor-metal junction with the current rectifying characteristics.
Note: The diode based on the Schottky barrier is a Schottky diode or a hot carrier diode. Schottky diodes show switching times down to below \(\pu{1 ns}\) and a low applied potential drop (\(\pu{0.15}\) to \(\pu{0.45 V}\)).