Potential energy barrier at a semiconductor-metal junction with the current rectifying characteristics.
Note:
The diode based on the Schottky barrier is a Schottky diode or a hot carrier diode. Schottky diodes show switching times down to below \(\pu{1 ns}\) and a low applied potential drop (\(\pu{0.15}\) to \(\pu{0.45 V}\)).
Source:
PAC, 2022, 94, 15. 'Glossary of terms relating to electronic, photonic and magnetic properties of polymers (IUPAC Recommendations 2021)' on page 46 (https://doi.org/10.1515/pac-2020-0501)