Polymeric material that, when irradiated, undergoes a marked change in solubility in a given solvent or is ablated.
Notes: - A resist polymer under @I03255@ either forms patterns directly or undergoes chemical reactions leading to pattern formation after subsequent processing.
- A resist material that is optimized for use with @UT07492@ or @VT07496@ light, an electron beam, an ion beam, or X-rays is called a @P04651@, electron-beam resist, ion-beam resist, or X-ray resist, respectively.
- In a positive-tone resist, also called a positive resist, the material in the irradiated area not covered by a mask is removed, which results in an image with a pattern identical with that on the mask. In a negative-tone resist, also called a negative resist, the non-irradiated area is subsequently removed, which results in an image with a pattern that is the complement of that on the mask.
Source:
PAC, 2004, 76, 889. 'Definitions of terms relating to reactions of polymers and to functional polymeric materials (IUPAC Recommendations 2003)' on page 903 (https://doi.org/10.1351/pac200476040889)